The doctoral dissertations of the former Helsinki University of Technology (TKK) and Aalto University Schools of Technology (CHEM, ELEC, ENG, SCI) published in electronic format are available in the electronic publications archive of Aalto University - Aaltodoc.
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Dissertation for the degree of Doctor of Science in Technology to be presented with due permission of the Department of Engineering Physics and Mathematics for public examination and debate in Auditorium F at Helsinki University of Technology (Espoo, Finland) on the 14th of December, 2007, at 12 noon.
Overview in PDF format (ISBN 978-951-22-9114-4) [1198 KB]
Dissertation is also available in print (ISBN 978-951-22-9113-7)
The miniaturization of electronics in the past decades has lead to a situation where the size of current state-of-the-art microelectronic devices is approaching the nanometer length scale. The current methods of microelectronics, which can be used to control the fabrication of the manufacturing on atomic level, can be used only in limited conditions, and new methods are needed. This is especially acute as the recent advances in nanotechnology have given new tools for further development in microelectronics. Molecular Beam Epitaxy (MBE) is currently perhaps the most important atomic scale method for fabricating epitaxial thin films. The quality of films is very high and control over the growth of them is possible on the atomic scale. However, the MBE method works only under quite restricted growth conditions. At low temperatures it often leads to rough surfaces and three dimensional structures instead of smooth epitaxial films. The same happens when the deposition flux is increased. The limiting factor is the rate of surface diffusion, which should be high compared to the deposition rate, in which case the deposited atoms have enough time to diffuse on the surface and form clusters.
In this Thesis submonolayer growth has been studied using Rate Equation formulation. Rate equations provide a flexible and computationally effective tool to model complex island growth phenomena and are particularly suitable in ion beam assisted deposition (IBAD) and low energy ion deposition (LEID) type of growth conditions. In IBAD and LEID the surface is under constant ion bombardment and growth is thus explicitly a nonequilibrium phenomenon. The advantage of such Hyperthermal Deposition (HTD) methods over the MBE is a higher deposition rate during the growth process. Also, control over the quality of the atomic layers is better.
The results presented in this Thesis suggest that there is possible improvement to be gained from experimental studies of submonolayer island growth. A more detailed knowledge of diffusion of islands on different surfaces and the detailed measurements of island break-up probabilities under various growth conditions could lead to more quantitative descriptions of growth in computationally inexpensive and flexible models, which could be used to find the optimal growth conditions and extend the limits of the current thin film manufacturing methods.
This thesis consists of an overview and of the following 6 publications:
Keywords: island growth, thin films, ion beam assisted deposition, low energy ion deposition, rate equations, hyperthermal deposition, particle coalescence method
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© 2007 Helsinki University of Technology