The doctoral dissertations of the former Helsinki University of Technology (TKK) and Aalto University Schools of Technology (CHEM, ELEC, ENG, SCI) published in electronic format are available in the electronic publications archive of Aalto University - Aaltodoc.
|
|
|
Dissertation for the degree of Doctor of Science in Technology to be presented with due permission of the Department of Electrical and Communications Engineering for public examination and debate in Auditorium TU1 at Helsinki University of Technology (Espoo, Finland) on the 13th of December, 2006, at 12 noon.
Overview in PDF format (ISBN 951-22-8305-0) [1025 KB]
Dissertation is also available in print (ISBN 951-22-8304-2)
In the current optical networks nonlinear interaction of optical signals with matter is often a nuisance in the operation of amplifiers, optical fibers and other linear devices. The next generation optical networks, on the other hand, need nonlinear optical components with signal processing capabilities. To create components that meet the demands of tomorrow, it is necessary to understand, control, exploit and enhance the available weak nonlinearities.
In this thesis the dynamic properties of quantum dot lasers and linear optical amplifiers are investigated. Additionally, optical memories and logic ports exploiting a new type of nonlinearity based on gain clamped optical amplifiers and interferometers are proposed. The properties of quantum dot lasers are studied by using a parametrized model for the bandstructure of the dots and the surrounding layers. The model is used to calculate the absorption spectrum, refractive index and other properties of the lasers at different excitation levels.
The properties of linear optical amplifiers, conventional gain clamped amplifiers and semiconductor optical amplifiers are described by a stochastic traveling wave rate equation model. The gain clamped optical amplifiers used together with interferometers are shown to provide a new fast nonlinearity, which can be used to construct coherent nonlinear optical circuits, including optical regenerators, flip-flop memories and logic gates.
The speed of the nonlinear devices presented in this thesis is limited by the modulation response of the gain clamped optical amplifiers above the laser threshold in the regime where there always is a large photon population in the laser mode. The speed may therefore reach values in excess of 100 GHz, or even higher values if the level of optical technologies evolves closer to the level of silicon technology. In principle the flip-flop structure developed in this thesis is suitable for integration.
This thesis consists of an overview and of the following 6 publications:
Keywords: semiconductor lasers and amplifiers, optical memories, nonlinear optical components
This publication is copyrighted. You may download, display and print it for Your own personal use. Commercial use is prohibited.
© 2006 Helsinki University of Technology