The doctoral dissertations of the former Helsinki University of Technology (TKK) and Aalto University Schools of Technology (CHEM, ELEC, ENG, SCI) published in electronic format are available in the electronic publications archive of Aalto University - Aaltodoc.

MOSFET RF Characterization Using Bulk and SOI CMOS Technologies

Jan Saijets

Dissertation for the degree of Doctor of Science in Technology to be presented with due permission of the Department of Electrical and Communications Engineering for public examination and debate in Auditorium S4 at Helsinki University of Technology (Espoo, Finland) on the 18th of June, 2007, at 12 o'clock noon.

Dissertation in PDF format (ISBN 978-951-38-7025-6)   [1634 KB]
VTT Publications 644, ISSN 1455-0849

Dissertation is also available in print (ISBN 978-951-38-7024-9)
Copyright © 2007 VTT Technical Research Centre of Finland
VTT Publications 644, ISSN 1235-0621


MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their effect on the small signal parameter extraction of MOS devices. These results can be used as guidelines for designing MOS RF characterization layouts with as small an AC extraction error as possible. The results can also be used in RF model extraction as criteria for required optimization accuracy.

Modifications to the digital CMOS model equivalent circuit are studied to achieve better RF behavior for the MOS model. The benefit of absorbing the drain and source parasitic series resistances into the current description is evaluated. It seems that correct high-frequency behavior is not possible to describe using this technique. The series resistances need to be defined extrinsically. Different bulk network alternatives were evaluated using scalable device models up to 10 GHz. Accurate output impedance behavior of the model requires a bulk resistance network. It seems that good accuracy improvement is achieved with just a single bulk resistor. Additional improvement is achieved by increasing the number of resistors to three. At this used frequency range no further accuracy improvement was achieved by increasing the resistor amount over three. Two modeling approaches describing the distributed gate behavior are also studied with different MOS transistor layouts. Both approaches improve the RF characteristics to some extent but with limited device geometry. Both distributed gate models describe well the high frequency device behavior of devices not commonly used at radio frequencies.

Keywords: RF, CMOS, modeling, MOSFET, measurement uncertainty

This publication is copyrighted. You may download, display and print it for Your own personal use. Commercial use is prohibited.

© 2007 Helsinki University of Technology

Last update 2011-05-26